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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220Fa package www..com *High voltage ,high speed APPLICATIONS *Converters *Inverters *Switching regulators *Motor control systems PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION BUT11F BUT11AF Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUT11F BUT11AF BUT11F BUT11AF CONDITIONS Open emitter VALUE 850 1000 400 450 9 5 10 2 4 TC=25 40 150 -65~150 UNIT V VCEO VEBO IC ICM IB IBM Ptot Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature Open base Open collector V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 3.125 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT11F IC=0.1A; IB=0 BUT11AF BUT11F BUT11AF BUT11F BUT11AF BUT11F BUT11AF IC=3A; IB=0.6A CONDITIONS www..com BUT11F BUT11AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=2.5A; IB=0.5A IC=3A; IB=0.6A 1.3 IC=2.5A; IB=0.5A VCE=850V ;VBE=0 1.0 VCE=1000V ;VBE=0 VEB=9V; IC=0 IC=5mA ; VCE=5V IC=0.5A ; VCE=5V 10 10 10 35 35 V VBEsat Base-emitter saturation voltage V ICES Collector cut-off current mA IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=2.5A; IB1=- IB2=0.5A VCC=250V;RL=100B 1.0 4.0 0.8 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com BUT11F BUT11AF Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 |
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